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IXTT110N10L2 - Power MOSFET

This page provides the datasheet information for the IXTT110N10L2, a member of the IXTH110N10L2 Power MOSFET family.

Datasheet Summary

Features

  • z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Integrated Gate Resistor for Easy Paralleling z Guaranteed FBSOA at 75°C Advantages z Easy to Mount z Space Savings z High Power Density.

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Datasheet Details

Part number IXTT110N10L2
Manufacturer IXYS
File Size 137.98 KB
Description Power MOSFET
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Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA IXTH110N10L2 IXTT110N10L2 VDSS = 100V ID25 = 110A ≤ RDS(on) 18mΩ N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 100 V 100 V ±20 V ±30 V 110 A 300 A 110 A 3 J 600 W -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 4.
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