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Advance Technical Information
High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTT12N140 IXTH12N140
VDSS = ID25 =
RDS(on) ≤
1400V 12A 2Ω
TO-268 (IXTT)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247
Maximum Ratings
1400
V
1400
V
±20
V
±30
V
12
A
40
A
6
A
750
mJ
890
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
4.0
g
6.
IXTT12N140 Datasheet
