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Advance Technical Information
High Current Power MOSFET
N-Channel Enhancement Mode
IXTH 50N30 IXTT 50N30
VDSS ID25
RDS(on)
= 300 V
= 50 A = 65 mΩ
Symbol
VDSS VDGR VGS VGSM ID25
IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque (TO-247) TO-247 TO-268
Maximum Ratings
300
V
300
V
±20
V
±30
V
50
A
200
A
50
A
50
mJ
1.5
J
5
V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
IXTT50N30 Datasheet
