IXTT1N450HV Datasheet PDF - IXYS High Voltage Power MOSFET Specs

IXTT1N450HV - High Voltage Power MOSFET

Datasheet Summary

Features

High Blocking Voltage.
High Voltage Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 3.5 6.0 V 100 nA 5 A 25 μA 15 μA 80  Advantages.
Easy to Mount.
Space Savings.
High Power Density.

Datasheet Details

Part number	IXTT1N450HV
Manufacturer	IXYS
File Size	214.11 KB
Description	High Voltage Power MOSFET
Datasheet	IXTT1N450HV Datasheet
Additional preview pages of the IXTT1N450HV datasheet.

📁 Similar Datasheet

IXTT1N100 - High-Voltage MOSFET (IXYS Corporation)

IXTT100N25P - N-Channel MOSFET (IXYS Corporation)

IXTT10P50 - P-Channel MOSFET (IXYS Corporation)

IXTT110N10P - N-Channel MOSFET (IXYS Corporation)

IXTT11P50 - P-Channel MOSFET (IXYS Corporation)

IXTT140N10P - Power MOSFET (IXYS Corporation)

IXTT28N50Q - Power MOSFET (International Rectifier)

IXTT48P20P - Power MOSFET (IXYS Corporation)

IXTT52N30P - Power MOSFET (IXYS Corporation)

IXTT64N25P - PolarHT Power MOSFET (IXYS Corporation)

Full PDF Text Transcription

Click to expand full text

High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A  80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 V 4500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 1 A 3 A TC = 25C 520 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-247HV) 10..65 / 22..14.6 1.13/10 N/lb Nm/lb.in TO-263HV TO-247HV 2.5 g 6.

Published: Jul 21, 2013 |