Click to expand full text
High Voltage Power MOSFET
Preliminary Technical Information
IXTT1N300P3HV IXTH1N300P3HV
VDSS I
D25
RDS(on)
= 3000V = 1.00A 50
N-Channel Enhancement Mode
TO-268HV (IXTT)
Symbol
VDSS VDGR
VGSS VGSM
ID25 ID110 IDM
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247HV
Maximum Ratings
3000
V
3000
V
20
V
30
V
1.00
A
0.65
A
2.60
A
195
W
- 55 ... +150
C
150
C
- 55 ... +150
C
300
°C
260
°C
1.13/10 Nm/lb.in
4.0
g
6.
IXTT1N300P3HV Datasheet
