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High Voltage Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode
Advance Technical Information
IXTT1N250HV
VDSS = ID25 =
RDS(on) ≤
2500V 1.5A 40Ω
TO-268S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s
Maximum Ratings
2500
V
2500
V
±20
V
±30
V
1.5
A
6
A
250
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
4
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = 0.
IXTT1N250HV Datasheet
