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IXBT6N170 - BIMOSFET Monolithic Bipolar MOS Transistor

Download the IXBT6N170 datasheet PDF. This datasheet also covers the IXBH6N170 variant, as both devices belong to the same bimosfet monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • z High blocking voltage z Integrated Anti-parallel diode z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBH6N170-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBT12N300 Bipolar MOS Transistor
IXBT12N300HV Bipolar MOS Transistor
IXBT14N300HV Bipolar MOS Transistor
IXBT16N170 BIMOSFET Monolithic Bipolar MOS Transistor
IXBT16N170AHV Bipolar MOS Transistor

Full PDF Text Transcription

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 24Ω Clamped inductive load TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 12 A 6A 36 A ICM = 16 VCES ≤ 1350 75 A V W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in.
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