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IXBT42N170 - Monolithic Bipolar MOS Transistor

Download the IXBT42N170 datasheet PDF. This datasheet also covers the IXBH42N170 variant, as both devices belong to the same monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBH42N170_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBT42N170A Monolithic Bipolar MOS Transistor
IXBT10N170 Bipolar MOS Transistor
IXBT16N170A Bipolar MOS Transistor
IXBD4410 Half Bridge Driver Chipset
IXBD4411 Half Bridge Driver Chipset

Full PDF Text Transcription

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 80 A 75 A 42 A 300 A ICM = 100 VCES ≤ 1350 360 A V W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in.
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