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IXBT42N300HV - Monolithic Bipolar MOS Transistor

Features

  • High Voltage Package.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage.
  • FBSOA.
  • SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8.
  • VCES, VGE = 0V Characteristic Values Min. Typ. Max. 3000 V 3.0 5.0 V TJ = 125°C 50 µA 250 µA I GES VCE(sat) V = 0V, V = ± 25V CE GE IC = 42A, VGE = 15V, Note 1 TJ = 125°C ±200 nA 2.5 3.0 V 3.

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Full PDF Text Transcription

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High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 104 A 42 A 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 84 A (RBSOA) Clamped Inductive Load 1500 V TSC (SCSOA) PC TJ TJM T stg T L TSOLD Md Weight VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive TC = 25°C 10 500 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering 300 Plastic Body for 10s 260 Mounting Torque (TO-247HV) 1.13/10 TO-268HV 4 TO-247HV 6 µs W °C °C °C °C °C Nm/lb.in g g VCES = IC110 = VCE(sat)  3000V 42A 3.
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