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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBA12N300HV IXBT12N300HV
VCES = IC110 = VCE(sat)
3000V 12A 3.2V
Symbol
VCES VCGR
VGES VGEM
I
C25
I
C110
ICM
SSOA (RBSOA)
PC
TJ TJM T
stg
TSOLD
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C
C
T = 110°C C
TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 30 Clamped Inductive Load TC = 25°C
Plastic Body for 10s TO-263HV TO-268HV
Maximum Ratings
3000
V
3000
V
± 20
V
± 30
V
30
A
12
A
100
A
ICM = 98
A
1500
V
160
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
260
°C
2.5
g
4.0
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BV CES
I = 250µA, V = 0V
C
GE
VGE(th)
IC = 250µA, VCE = VGE
ICES
VCE = 0.
IXBT12N300HV Datasheet
