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IXBT14N300HV - Bipolar MOS Transistor

Download the IXBT14N300HV datasheet PDF. This datasheet also covers the IXBA14N300HV variant, as both devices belong to the same bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Voltage Packages.
  • High Blocking Voltage.
  • Anti-Parallel Diode.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBA14N300HV-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXBT42N170A Monolithic Bipolar MOS Transistor IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBT12N300 Bipolar MOS Transistor
IXBT12N300HV Bipolar MOS Transistor
IXBT16N170 BIMOSFET Monolithic Bipolar MOS Transistor
IXBT16N170AHV Bipolar MOS Transistor
IXBT20N300 Bipolar MOS Transistor

Full PDF Text Transcription

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL T SOLD FC Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 38 A 14 A 120 A VGE = 15V, TVJ = 125°C, RG = 20 ICM = 120 A Clamped Inductive Load 1500 V VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 µs TC = 25°C 200 W -55 ... +150 °C 150 °C -55 ...
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