Datasheet4U Logo Datasheet4U.com

IXBT42N170A - Monolithic Bipolar MOS Transistor

Download the IXBT42N170A datasheet PDF. This datasheet also covers the IXBH42N170A variant, as both devices belong to the same monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • z High Blocking Voltage z International Standard Packages z Anti-Parallel Diode z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBH42N170A_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXBT42N300HV Monolithic Bipolar MOS Transistor IXYS
IXBT12N300 Bipolar MOS Transistor IXYS
IXBT12N300HV Bipolar MOS Transistor IXYS
IXBT14N300HV Bipolar MOS Transistor IXYS
IXBT16N170 BIMOSFET Monolithic Bipolar MOS Transistor IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBT42N170 Monolithic Bipolar MOS Transistor
IXBT10N170 Bipolar MOS Transistor
IXBT16N170A Bipolar MOS Transistor
IXBD4410 Half Bridge Driver Chipset
IXBD4411 Half Bridge Driver Chipset

Full PDF Text Transcription

Click to expand full text
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.0V 20ns Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=p1e2ti0tiv0eV, TJ = 125°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1700 1700 V V ± 20 V ± 30 V 42 A 21 A 265 A ICM = 84 1360 A V 10 357 -55 ... +150 150 -55 ... +150 300 260 1.
Published: |