Datasheet4U Logo Datasheet4U.com

IXBT10N170 - Bipolar MOS Transistor

Features

  • z z Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb. in. 6 4 g g z z z High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification z Symbol Test Conditions Characteristic Values (TJ.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXBT12N300 Bipolar MOS Transistor IXYS
IXBT12N300HV Bipolar MOS Transistor IXYS
IXBT14N300HV Bipolar MOS Transistor IXYS
IXBT16N170 BIMOSFET Monolithic Bipolar MOS Transistor IXYS
IXBT16N170AHV Bipolar MOS Transistor IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBT16N170A Bipolar MOS Transistor
IXBT42N170 Monolithic Bipolar MOS Transistor
IXBT42N170A Monolithic Bipolar MOS Transistor
IXBD4410 Half Bridge Driver Chipset
IXBD4411 Half Bridge Driver Chipset

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ±20 ±30 20 10 40 ICM = 20 V CES = 1350 140 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V W °C °C °C °C °C TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.
Published: |