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Advance Technical Information
High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV
Bipolar MOS Transistor
VCES = IC25 = VCE(sat)
1700V 16A 6.0V
Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
FC
Weight
Test Conditions
Maximum Ratings
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient
1700
V
1700
V
± 20
V
± 30
V
TC = 25°C TC = 90°C TC = 25°C, 1ms
16
A
10
A
40
A
VGE = 15V, TVJ = 125°C, RG = 33
ICM = 40
A
Clamped Inductive Load
1350
V
VGE = 15V, VCE = 1200V, TJ = 125°C RG = 33, Non Repetitive
10
μs
TC = 25°C
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
300
°C
Plastic Body for 10s
260
°C
Mounting Force (TO-263)
10..65 / 22.
IXBT16N170AHV Datasheet
