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IXBT16N170 - BIMOSFET Monolithic Bipolar MOS Transistor

Download the IXBT16N170 datasheet PDF. This datasheet also covers the IXBH16N170 variant, as both devices belong to the same bimosfet monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBH16N170-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBT16N170AHV Bipolar MOS Transistor
IXBT12N300 Bipolar MOS Transistor
IXBT12N300HV Bipolar MOS Transistor
IXBT14N300HV Bipolar MOS Transistor
IXBT20N300 Bipolar MOS Transistor

Full PDF Text Transcription

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 22Ω Clamped inductive load TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 40 A 16 A 120 A ICM = 40 VCES ≤ 1350 250 A V W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in.
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