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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBH20N300 IXBT20N300
VCES = IC110 = VCE(sat)
3000V 20A 3.2V
Symbol
VCES VCGR
VGES V
GEM
IC25 IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
T L
T SOLD
Md
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
3000
V
3000
V
± 20
V
± 30
V
50
A
20
A
140
A
ICM = 130
A
1500
V
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
IXBT20N300 Datasheet
