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PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P IXTA 110N055P IXTP 110N055P
VDSS ID25
RDS(on)
= 55 V = 110 A = 13.5 mΩ
TO-3P (IXTQ)
Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
Maximum Ratings 55 55 ± 20 ± 30 110 75 250 110 30 1.0 10 330 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns
G G D S (TAB) G D S (TAB)
TO-220 (IXTP)
TO-263 (IXTA)
W °C °C °C °C °C
G = Gate S = Source
S (TAB) D = Drain TAB = Drain
1.6 mm (0.062 in.
IXTQ110N055P Datasheet
