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isc N-Channel MOSFET Transistor
IXTQ110N055P
·FEATURES ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 13.5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
55
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
110
A
IDM
Drain Current-Single Plused
250
A
PD
Total Dissipation @TC=25℃
330
W
Tj
Max.
IXTQ110N055P Datasheet
