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PolarHTTM Power MOSFET
IXTK 120N20P IXTQ 120N20P
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 = RDS(on) ≤
200 V 120 A
22 m Ω
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR
TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
200
V
200
V
VGS VGSM
Continuous Transient
±20
V
±30
V
ID25 ID(RMS) IDM I
AR
EAR E
AS
TC = 25° C External lead current limit
TC = 25° C, pulse width limited by TJM
T C
= 25° C
TC = 25° C
T C
= 25° C
120
A
75
A
300
A
60
A
60
mJ
2.0
J
dv/dt
PD TJ TJM Tstg
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω
TC = 25° C
10
V/ns
714
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
TL T
SOLD
1.6 mm (0.062 in.
IXTQ120N20P Datasheet
