Click to expand full text
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH130N10T IXTQ130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
TO-247 (IXTH)
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247)(TO-3P) TO-247 TO-3P
Maximum Ratings 100 100
V V
± 20 V
130 A 75 A 300 A
65 A 500 mJ
360 W
-55 ... +175 175
-55 ... +175
300 260
1.13 / 10
°C °C °C
°C °C
Nm/lb.in.
6.0 g 5.
IXTQ130N10T Datasheet
