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Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH152N085T IXTQ152N085T
VDSS ID25
RDS(on)
=8 5 V = 152 A ≤ 7.0 m Ω
Symbol V DSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 °C to 175 °C TJ = 25°C to 175 °C; R GS = 1 M Ω Transient TC = 25 °C Lead Current Limit, RMS TC = 25 °C, pulse width limited by T JM TC = 25°C TC = 25 °C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
Maximum Ratings 85 85 ± 20 152 75 410 25 750 3 360 -55 ... +175 175 -55 ... +175 V V V A A A A mJ
TO-247 (IXTH)
G
D
S
(TAB)
TO-3P (IXTQ) V/ns W °C °C °C °C °C
G D S D = Drain TAB = Drain
(TAB)
1.6 mm (0.062 in.
IXTQ152N085T Datasheet
