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PolarHTTM Power MOSFET
IXTK 150N15P IXTQ 150N15P
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 = RDS(on) ≤
150 V 150 A
13 m Ω
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR
TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
150
V
150
V
VGS VGSM
Continuous Transient
±20
V
±30
V
ID25 ID(RMS) I
DM
IAR EAR EAS
TC = 25° C External lead current limit
T C
=
25°
C,
pulse
width
limited
by
T JM
TC = 25° C
TC = 25° C TC = 25° C
150
A
75
A
340
A
60
A
80
mJ
2.5
J
dv/dt
PD TJ TJM Tstg
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω
TC = 25° C
10
V/ns
714
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
T L
TSOLD
1.6 mm (0.062 in.
IXTQ150N15P Datasheet
