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PolarHTTM Power MOSFET
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
250 V 100 A 27 mΩ
Symbol
Test Conditions
Maximum Ratings TO-264 (IXTK)
V DSS
VDGR
VGSS VGSM
ID25 ID(RMS) IDM IAR E
AR
EAS
dv/dt
PD TJ T
JM
Tstg
TL TSOLD
M d
Weight
T J
= 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous Transient
TC = 25° C External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
T C
= 25° C
TC = 25° C
I S
≤
I,
DM
di/dt
≤ 100
A/µs,
V DD
≤
V, DSS
T J
≤150° C,
R G
=
4
Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque
TO-3P TO-264 TO-268
250
V
250
V
±20
V
±30
V
100
A
75
A
250
A
60
A
60
mJ
2.0
J
10
V/ns
600
W
-55 ...
IXTQ100N25P Datasheet
