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Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH102N20T IXTQ102N20T IXTV102N20T
VDSS = ID25 =
RDS(on) ≤
200 102
23
V A mΩ
Symbol
VDSS
VGSM
I
D25
ILRMS IDM I
AS
EAS
dv/dt
PD TJ TJM Tstg
T L
TSOLD
Md
F C
Weight
Test Conditions
TJ = 25°C to 175°C Transient
T = 25°C C
Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM T = 25°C
C
TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220
Maximum Ratings TO-247 (IXTH)
200 V
± 30
V
102 A 75 A
250 A
G D S
5A 1.2 J TO-3P (IXTQ)
7 V/ns
(TAB)
750 W
G
-55 ... +175
°C
D
175 °C
S
-55 ...
IXTQ102N20T Datasheet
