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FPD6836P70 - LOW NOISE HIGH FREQUENCY PACKAGED PHEMT

General Description

The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications.

Gain blocks and medium power stages WiMax (2-11GHz) WLAN 80

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Datasheet Details

Part number FPD6836P70
Manufacturer Filtronic
File Size 248.34 KB
Description LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
Datasheet download datasheet FPD6836P70 Datasheet

Full PDF Text Transcription for FPD6836P70 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FPD6836P70. For precise diagrams, and layout, please refer to the original PDF.

FPD6836P70 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: PACKAGE: • 22 dBm Output Power (P1dB) • 15 dB Power Gain (G1dB) at 5.8 GHz • 0.8 dB Noise Figure at 5.8 GHz...

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• 15 dB Power Gain (G1dB) at 5.8 GHz • 0.8 dB Noise Figure at 5.8 GHz • 32 dBm Output IP3 at 5.8 GHz • 45% Power-Added Efficiency at 5.8 GHz • Useable Gain to 18 GHz Datasheet v3.0 GENERAL DESCRIPTION: The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications. TYPICAL APPLICATIONS: • Gain blocks and medium power stages • WiMax (2-11GHz) • WLAN 802.11a (5.