FPD6836P70 - LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
Filtronic
General Description
The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications.
Gain blocks and medium power stages
WiMax (2-11GHz)
WLAN 80
Full PDF Text Transcription for FPD6836P70 (Reference)
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FPD6836P70 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: PACKAGE: • 22 dBm Output Power (P1dB) • 15 dB Power Gain (G1dB) at 5.8 GHz • 0.8 dB Noise Figure at 5.8 GHz...
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• 15 dB Power Gain (G1dB) at 5.8 GHz • 0.8 dB Noise Figure at 5.8 GHz • 32 dBm Output IP3 at 5.8 GHz • 45% Power-Added Efficiency at 5.8 GHz • Useable Gain to 18 GHz Datasheet v3.0 GENERAL DESCRIPTION: The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications. TYPICAL APPLICATIONS: • Gain blocks and medium power stages • WiMax (2-11GHz) • WLAN 802.11a (5.