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FPD1000AS - 1W PACKAGED POWER PHEMT

General Description

AND APPLICATIONS SEE PACKAGE OUTLINE FOR MARKING CODE

The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band.

The surface-mount package has been optimized for low parasitics.

Key Features

  • 00, tol. +0.25pF Capacitor, 5.6 pF, 0603, ATC 600, tol. +0.25pF Deleted Capacitor, 33 pF, 0603, ATC 600, tol. +5% Capacitor,.

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Datasheet Details

Part number FPD1000AS
Manufacturer Filtronic
File Size 536.55 KB
Description 1W PACKAGED POWER PHEMT
Datasheet download datasheet FPD1000AS Datasheet

Full PDF Text Transcription for FPD1000AS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FPD1000AS. For precise diagrams, and layout, please refer to the original PDF.

FPD1000AS 1W PACKAGED POWER PHEMT • PERFORMANCE (1.8 GHz) ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ ...

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Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Suitable for applications to 5 GHz DESCRIPTION AND APPLICATIONS SEE PACKAGE OUTLINE FOR MARKING CODE • The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other

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