Full PDF Text Transcription for FPD1500SOT89 (Reference)
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LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT FPD1500SOT89 • PERFORMANCE (1850 MHz) ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 ...
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wer (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD1500SOT89E DESCRIPTION AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and in
FPD1500SOT89 Datasheet
