Datasheet Details
| Part number | FPD1000V |
|---|---|
| Manufacturer | Filtronic |
| File Size | 200.99 KB |
| Description | 1W POWER PHEMT |
| Datasheet |
 FPD1000V Datasheet
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General Description
The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.
Key Features
- S (1.8 GHz).
- 31 dBm Linear Output Power.
- 16 dB Power Gain.
- Useable Gain to 10 GHz.
- 41 dBm Output IP3.
- Maximum Stable Gain of 20 dB.
- 50% Power-Added Efficiency.
- 10V Operation / Plated Source Thru-Vias DRAIN BOND PAD (2X) FPD1000V 1W POWER PHEMT GATE BOND PAD (2X).