Datasheet Details
| Part number | FPD1050 |
|---|---|
| Manufacturer | Filtronic |
| File Size | 180.59 KB |
| Description | 0.75W POWER PHEMT |
| Datasheet |
 FPD1050 Datasheet
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General Description
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
Key Features
- S.
- 28.5 dBm Linear Output Power at 12 GHz.
- 11 dB Power Gain at 12 GHz.
- 14 dB Maximum Stable Gain at 12 GHz.
- 41 dBm Output IP3.
- 45% Power-Added Efficiency SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) FPD1050 GATE BOND PAD (1X) DIE SIZE: 470 x 440 µm DIE.