Datasheet Details
| Part number | FPD1500P100 |
|---|---|
| Manufacturer | Filtronic |
| File Size | 186.12 KB |
| Description | 1W PACKAGED POWER PHEMT |
| Datasheet |
 FPD1500P100 Datasheet
|
|
|
General Description
AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 1500 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.
Key Features
- S.
- 29.5 dBm Linear Output Power.
- 18 dB Power Gain at 2 GHz.
- 10.5 dB Maximum Stable Gain at 10 GHz.
- 39 dBm Output IP3.
- 45% Power-Added Efficiency at 2 GHz FPD1500P100.