Datasheet Details
| Part number | FPD6836 |
|---|---|
| Manufacturer | Filtronic |
| File Size | 91.54 KB |
| Description | 0.25W POWER PHEMT |
| Datasheet |
 FPD6836 Datasheet
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General Description
The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 360 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography.
The recessed gate structure minimizes parasitics to optimize performance.
Key Features
- 25.5 dBm Output Power (P1dB).
- 10 dB Power Gain at 12 GHz.
- 16.5 dB Max Stable Gain at 12 GHz.
- 12 dB Maximum Stable Gain at 24 GHz.
- 50% Power-Added Efficiency.
- 8V Operation.
