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FPD10000AF - 10W PACKAGED POWER PHEMT

General Description

AND APPLICATIONS FPD10000AF 10W PACKAGED POWER PHEMT SEE PACKAGE OUTLINE FOR MARKING CODE

The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band.

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Datasheet Details

Part number FPD10000AF
Manufacturer Filtronic
File Size 189.32 KB
Description 10W PACKAGED POWER PHEMT
Datasheet download datasheet FPD10000AF Datasheet

Full PDF Text Transcription for FPD10000AF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FPD10000AF. For precise diagrams, and layout, please refer to the original PDF.

PRELIMINARY • PERFORMANCE (1.8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent c...

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WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website ♦ Usable Gain to 3.8GHz DESCRIPTION AND APPLICATIONS FPD10000AF 10W PACKAGED POWER PHEMT SEE PACKAGE OUTLINE FOR MARKING CODE • The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking.

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