Datasheet Details
| Part number | AOT66914L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 409.66 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AOT66914L Datasheet
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| Part number | AOT66914L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 409.66 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AOT66914L Datasheet
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• Trench Power MOSFET - AlphaSGTTM technology • Extremely Low RDS(ON) • Optimized switching performance • 175°C operating temperature • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100V 120A < 2.7mΩ < 3.5mΩ Applications • Telecom DC-DC • Industrial power • Load switch • Telecom Hot-Swap Top View D TO220 Bottom View D 100% UIS Tested 100% Rg Tested Max Tj=175°C TO-263 Top View D2PAK Bottom View D D D G DS AOT66914L Orderable Part Number AOT66914L AOB66914L S DG Package Type TO-220 TO-263 S G G G S S AOB66914L Form Tube Tape & Reel Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 120 120 480 45 38 90 405 375 185 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 50 0.26 Max 15 60 0.40 Units °C/W °C/W °C/W Rev.1.3: May 2023 www.aosmd.com Page 1 of 6 AOT66914L/AOB66914L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A VGS=6V, ID=20A Forward Transconductance VD
AOT66914L/AOB66914L 100V N-Channel AlphaSGT TM General.
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