Datasheet Details
| Part number | AOT66613L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 395.69 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 AOT66613L Datasheet
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| Part number | AOT66613L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 395.69 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
AOT66613L Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 60V 120A < 2.5mΩ < 3.0mΩ Applications • High Frequency Switching and Synchronous Rectification • BLDC 100% UIS Tested 100% Rg Tested Top View D TO220 Bottom View D TO-263 Top View D2PAK Bottom View D D D G DS AOT66613L Orderable Part Number AOT66613L AOB66613L S DG Package Type TO-220 TO-263 S G G G S S AOB66613L Form Tube Tape & Reel Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 120 120 480 44.5 35.5 48 346 260 104 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 12 50 Maximum Junction-to-Case Steady-State RqJC 0.4 Max 15 60 0.48 Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 6 AOT66613L/AOB66613L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=
AOT66613L/AOB66613L 60V N-Channel AlphaSGT TM General.
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