Datasheet Details
| Part number | AOT600A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 483.83 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet |
 AOT600A60L Datasheet
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Download the AOT600A60L datasheet PDF. This datasheet also includes the AOTF600A60L variant, as both parts are published together in a single manufacturer document.
| Part number | AOT600A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 483.83 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet |
AOT600A60L Datasheet
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Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Server power 100% UIS Tested 100% Rg Tested 700V 32A < 0.6Ω 11.5nC 1.8mJ TO-220F TO-220 TO-263 D2PAK D D S D G S GD S G G AOTF600A60L AOT600A60L AOB600A60L S Orderable Part Number AOTF600A60L AOT600A60L AOB600A60L Package Type TO220F Green TO220 Green TO263 Green Form Tube Tube Tape &Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)600A60L AOTF600A60L Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 8 8* 5 5* 32 1.6 1.3 19 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 96 0.8 27.5 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOT(B)600A60L 65 0.5 1.3 AOTF600A60L 65 --4.6 Units °C/W °C/W Rev.3.2: June 2024 www.aosmd.com Page 1 of 6 AOTF600A60L/AOT600A60L/AOB600A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAME
AOTF600A60L/AOT600A60L/AOB600A60L 600V, a MOS5 TM N-Channel Power Transistor.
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