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AOT600A70L - 700V N-Channel Power Transistor

Download the AOT600A70L datasheet PDF. This datasheet also includes the AOTF600A70L variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AOTF600A70L-AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting.

100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 800V 34A < 0.6Ω 15.5nC 1.8mJ D AOT600A70L S D G AOTF600A70L GDS S G AOB600A70L G S Orderable Part Number AOTF600A70L AOT600A70L AOB600A70L Package Type TO220F Green TO220 Green TO263 Form Tube Tube Tape&Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)600A70L AOTF600A70L Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C VGS ID IDM IAR EAR EAS dv/dt PD ±30 8.5 8.5* 5 5* 34 2.1 2.2 19 100 20 104 27 0.8 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.

AOT(B)600A70L 65 0.5 1.2 AOTF600A70L 65 --4.6 Units °C/W °C/W °C/W Rev.1.2: May 2024 www.aosmd.com Page 1 of 6 AOTF600A70L/AOT600A70L/AOB600A70L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdow

Overview

AOTF600A70L/AOT600A70L/AOB600A70L 700V, a MOS5 TM N-Channel Power Transistor.

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