Datasheet Details
| Part number | AOT66811L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 597.04 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
 AOT66811L Datasheet
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| Part number | AOT66811L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 597.04 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
AOT66811L Datasheet
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• Trench Power AlphaSGT2TM technology • Low RDS(ON) and optimized switching performance • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 80V 120A < 3mΩ < 3.4mΩ Applications • Industrial Application • Telecom and Server Power Supply 100% UIS Tested 100% Rg Tested Max Tj=175°C Top View TO220 Bottom View D D D Orderable Part Number AOT66811L S GD SDG Package Type TO-220 Form Tube G S Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±20 120 120 480 43 36 75 281 310 155 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 12 50 Maximum Junction-to-Case Steady-State RqJC 0.4 Max 15 60 0.48 Units °C/W °C/W °C/W Rev 1.0: September 2021 www.aosmd.com Page 1 of 6 AOT66811L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capaci
AOT66811L 80V N-Channel AlphaSGT2 TM General.
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