Datasheet Details
| Part number | AOT66616L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 444.49 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOT66616L Datasheet
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| Part number | AOT66616L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 444.49 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AOT66616L Datasheet
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 140A < 3.2mΩ < 4.6mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications Top View D TO220 Bottom View D 100% UIS Tested 100% Rg Tested Top View D TO-263 D2PAK Bottom View D D G DS AOT66616L Orderable Part Number AOT66616L AOB66616L S DG Package Type TO-220 TO-263 S G AOB66616L G S G S Form Tube Tape & Reel Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 140 95 330 38.5 30.5 35 184 125 50 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 50 0.8 Max 15 60 1.0 Units °C/W °C/W °C/W Rev.2.0: April 2019 www.aosmd.com Page 1 of 6 AOT66616L/AOB66616L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=60V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=6V, ID=2
AOT66616L/AOB66616L 60V N-Channel AlphaSGT TM General.
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|---|---|
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