GTVA355001EC Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

Description

GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 * 3500 MHz .
The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.

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Datasheet Specifications

Part number: GTVA355001EC
Manufacturer: Wolfspeed
File Size: 539.28 KB
Datasheet: GTVA355001EC-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* GaN on SiC HEMT technology
* Broadband internal input and output matching
* Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB
* Pb-free and RoHS complia

GTVA355001EC Distributors

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GTVA355001EC Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

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