Datasheet4U Logo Datasheet4U.com

GTVA355001EC Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA355001EC Description

GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 * 3500 MHz .
The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.

GTVA355001EC Features

* GaN on SiC HEMT technology
* Broadband internal input and output matching
* Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB
* Pb-free and RoHS complia

📥 Download Datasheet

Preview of GTVA355001EC PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
GTVA355001EC
Manufacturer
Wolfspeed
File Size
539.28 KB
Datasheet
GTVA355001EC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

📁 Related Datasheet

  • GTVA126001EC - 600W High Power RF GaN HEMT (MACOM)
  • GTVA212701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)
  • GTVA220701FA - Thermally-Enhanced High Power RF GaN HEMT (Infineon)
  • GTVA221701FA - Thermally-Enhanced High Power RF GaN HEMT (Infineon)
  • GTVA261701FA - Thermally-Enhanced High Power RF GaN HEMT (Infineon)
  • GTV350MPZI-04 - LCD (DALIAN GOOD DISPLAY)
  • GTV358 - Rail-to-Rail Dual Operational Amplifier (Giantec Semiconductor)
  • GTV4000 - 2Fh TV receiver (Philips)

📌 All Tags

Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed
Wolfspeed GTVA355001EC-like datasheet