GTVA126001EC 600W High Power RF GaN HEMT

MACOM

Description

GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC * 1.4 GHz .
The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.

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Datasheet Specifications

Part number: GTVA126001EC
Manufacturer: MACOM
File Size: 430.25 KB
Datasheet: GTVA126001EC-MACOM.pdf
Description: 600W High Power RF GaN HEMT

Features

* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle
* Output power P3dB = 600 W
* Drain efficiency = 65%
* Gain = 18 dB
* Capable of withstanding a 10:1 loa

GTVA126001EC Distributors

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GTVA126001EC 600W High Power GaN HEMT MACOM

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