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GTVA107001EC High Power RF GaN

GTVA107001EC Description

GTVA107001EC/FC High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz .
The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.

GTVA107001EC Features

* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB
* Capable of withstanding a 10:1 load mismatch (all phase an

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Datasheet Details

Part number
GTVA107001EC
Manufacturer
Wolfspeed
File Size
632.40 KB
Datasheet
GTVA107001EC-Wolfspeed.pdf
Description
High Power RF GaN

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High Power GaN Wolfspeed
Wolfspeed GTVA107001EC-like datasheet