GTVA261701FA Thermally-Enhanced High Power RF GaN HEMT

Infineon

GTVA261701FA Description

advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 * 2690 MHz .
The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

GTVA261701FA Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
* Input Matched
* Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB
* GaN HEMT technology
* H

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GTVA261701FA Datasheet Preview — Preview of GTVA261701FA PDF

Datasheet Details

Part number: GTVA261701FA
Manufacturer: Infineon ↗
File Size: 119.64 KB
Datasheet: GTVA261701FA-Infineon.pdf
Description: Thermally-Enhanced High Power RF GaN HEMT

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Thermally-Enhanced High Power GaN HEMT Infineon

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