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GTVA104001FA High Power RF GaN

GTVA104001FA Description

GTVA104001FA Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, DC - 1.4 GHz .
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.

GTVA104001FA Features

* input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Performance at 1% Duty Cycle VDS = 50 V, IDQ = 100 mA, 128 µs
* 1%, Tflange = 25°C 23 ergoqhgorgn' 2q2pjgfq4po5g 21 20 960 MHz 19 1030 MHz 1150 MHz 18 1215 MHz 1090 MHz 1

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Datasheet Details

Part number
GTVA104001FA
Manufacturer
Wolfspeed
File Size
366.75 KB
Datasheet
GTVA104001FA-Wolfspeed.pdf
Description
High Power RF GaN

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High Power GaN Wolfspeed
Wolfspeed GTVA104001FA-like datasheet