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GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA212701FA Description

GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 * 2200 MHz .
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band.

GTVA212701FA Features

* input matching, high efficiency, and a thermally-enhanced earless package. Package Types: H-87265J-2 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Gain 20 40 16 2

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Datasheet Details

Part number
GTVA212701FA
Manufacturer
MACOM
File Size
544.42 KB
Datasheet
GTVA212701FA-MACOM.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT MACOM
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