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GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA262701FA Description

GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 * 2690 MHz .
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

GTVA262701FA Features

* input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. GTVA262701FA Package H-87265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz. 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth

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Datasheet Details

Part number
GTVA262701FA
Manufacturer
Wolfspeed
File Size
344.96 KB
Datasheet
GTVA262701FA-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed
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