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GTVA123501FA Thermally-Enhanced High Power RF GaN

GTVA123501FA Description

GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 * 1400 MHz .
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band.

GTVA123501FA Features

* input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Efficiency (%) Power Sweep, Pulsed CW VDS = 50 V, IDQ = 100 mA 300 μs pulse width, 10% duty cycle 22 21 20 19 18 17 16 15 0 80 70 60 50 40 Gain: 1200 MHz Gain: 1300 MHz 30 Gain:

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Datasheet Details

Part number
GTVA123501FA
Manufacturer
Wolfspeed
File Size
187.83 KB
Datasheet
GTVA123501FA-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN

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Thermally-Enhanced High Power GaN Wolfspeed
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