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GTVA126001FC, GTVA126001EC Thermally-Enhanced High Power RF GaN HEMT

GTVA126001FC Description

GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC * 1.4 GHz .
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.

GTVA126001FC Features

* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power (P3dB) = 600 W - Drain efficiency = 65% - Gain = 18 dB
* Capable of withstanding a 10:1 load mismatch (all phase

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: GTVA126001FC, GTVA126001EC. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
GTVA126001FC, GTVA126001EC
Manufacturer
Wolfspeed
File Size
436.96 KB
Datasheet
GTVA126001EC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN HEMT
Note
This datasheet PDF includes multiple part numbers: GTVA126001FC, GTVA126001EC.
Please refer to the document for exact specifications by model.

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Wolfspeed GTVA126001FC-like datasheet