GTVA126001FC Features
* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle
* Output power P3dB = 600 W
* Drain efficiency = 65%
* Gain = 18 dB
* Capable of withstanding a 10:1 loa
Datasheet Details
GTVA126001FC, GTVA126001EC
MACOM
430.25 KB
600w high power rf gan hemt.
This datasheet PDF includes multiple part numbers: GTVA126001FC, GTVA126001EC.
Please refer to the document for exact specifications by model.
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GTVA126001FC Distributor
