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GTVA126001FC, GTVA126001EC 600W High Power RF GaN HEMT

GTVA126001FC Description

GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC * 1.4 GHz .
The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.

GTVA126001FC Features

* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle
* Output power P3dB = 600 W
* Drain efficiency = 65%
* Gain = 18 dB
* Capable of withstanding a 10:1 loa

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: GTVA126001FC, GTVA126001EC. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
GTVA126001FC, GTVA126001EC
Manufacturer
MACOM
File Size
430.25 KB
Datasheet
GTVA126001EC-MACOM.pdf
Description
600W High Power RF GaN HEMT
Note
This datasheet PDF includes multiple part numbers: GTVA126001FC, GTVA126001EC.
Please refer to the document for exact specifications by model.

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600W High Power GaN HEMT MACOM
MACOM GTVA126001FC-like datasheet