Description
GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC * 1.4 GHz .
The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.
Features
* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V,
300 μs pulse width, 10% duty cycle
* Output power P3dB = 600 W
* Drain efficiency = 65%
* Gain = 18 dB
* Capable of withstanding a 10:1 loa
