GTVA126001EC Thermally-Enhanced High Power RF GaN HEMT

Wolfspeed

Description

GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC * 1.4 GHz .
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.

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Datasheet Specifications

Part number: GTVA126001EC
Manufacturer: Wolfspeed
File Size: 436.96 KB
Datasheet: GTVA126001EC-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN HEMT

Features

* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power (P3dB) = 600 W - Drain efficiency = 65% - Gain = 18 dB
* Capable of withstanding a 10:1 load mismatch (all phase

GTVA126001EC Distributors

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GTVA126001EC Thermally-Enhanced High Power GaN HEMT Wolfspeed

Wolfspeed GTVA126001EC-like datasheet