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C3M0065100K Silicon Carbide Power MOSFET

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Description

C3M0065100K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (TAB) .

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Datasheet Specifications

Part number
C3M0065100K
Manufacturer
Wolfspeed
File Size
886.50 KB
Datasheet
C3M0065100K-Wolfspeed.pdf
Description
Silicon Carbide Power MOSFET

Features

* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode wi

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Benefits
* Reduce switching losses and minimize gate ringing
* Higher system efficiency
* Reduce cooling requirements
* Increase

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